Device Engineer

About

RAAAM Memory Technologies Ltd. is an innovative embedded memory solutions provider, that delivers the most cost-effective on-chip memory technology in the semiconductor industry. Our products solve the embedded memory density and energy challenges of the CMOS semiconductor industry and enables industry growth for applications in the areas of AR/VR, Machine Learning (ML), Internet-of-Things (IoT) and Automotive.

We offer a dynamic work environment with a growing team of creative and ambitious engineers that strive for innovative solutions that are readily applicable to a variety of application domains.

Job description

We are looking for a highly motivated, Technology / Device / Process Engineer to lead the development of our next-generation GCRAM technology. In this role, you will pioneer the device and process engineering required to bring our next-generation memory architecture to life.

You will work closely with top-tier scientific advisors and collaborate with leading external research and development partners to drive device and process development, device fabrication, characterization, and process integration and interface with circuit engineers. This is an ideal role for a recent PhD graduate looking to transition cutting-edge academic research into industry-disrupting commercial hardware.

Responsibilities

• Lead the process development, fabrication path, and electrical characterization and modelling for our next-generation GCRAM technology.
• Collaborate with external R&D partners to define, optimize, and run integration flows for next-generation GCRAM devices.
• Act as the primary technical interface between RAAAM and R&D partners to align fabrication runs with simulation and design models.
• Oversee electrical measurements (I-V, C-V, reliability, and stability testing) on fabricated test structures and develop models to guide our circuit design team.
• Evaluate and benchmark different process recipes, device architectures and structures, and materials to optimize next-generation GCRAM performance.

Qualifications

• PhD degree in Electrical Engineering, Materials Science, Physics, or a closely related field, with a research focus on advanced semiconductor devices, novel device architectures, or advanced process integration.
• Strong background in semiconductor device physics and extensive experience with TCAD simulation tools (e.g., Synopsys Sentaurus, Silvaco)
• Collaboration & Communication: Excellent communication skills and the ability to work independently in a highly collaborative, multi-partner environment (academic advisors, external research organizations, and internal circuit design teams).
• Preferred / Advantage: Hands-on experience with advanced semiconductor device fabrication, characterization, or process integration and prior cleanroom fabrication experience.
• Advantage: basic background in microelectronics and circuit design.

Location

• Lausanne, Switzerland

Full / Part Time

• Full time